Post anneal cross section of M1, 3:1 AR, 32 nm node
Post anneal cross section of M1-V1-M2, 45 nm node
Post anneal cross section of M1-V1-M2, 45 nm node

Copper Damascene Interconnects: Everplate

The Everplate portfolio consists of medium and high purity base electrolytes and technology node specific additive systems used for the electrochemical deposition of copper for Damascene interconnects. Everplate process solutions are compatible with 200 and 300 mm wafers and are available for 45 nm node technologies and beyond. Next generation Everplate products are currently being developed at CNSE for 32 and 22 nm node technologies.

Electrodeposition of High Purity Copper

Everplate base electrolytes are available in various acid and copper concentrations for optimum tool and process control and can be customized according to the application requirements. Medium and high purity specifications of less than 10 ppm and 100 ppb for cations are controlled by Inductively Coupled Plasma Mass Spectroscopy (ICP-MS). Advanced filtration using 0.2 µm membrane technology and Optical Liquid Particle Counter (OLC) control the particle level in the chemistry, allowing particle counts of less than 1,000 / ml and 10 / ml for medium and high purity specifications, respectively. 

Reliable and Void-Free Filling of Trenches and Vias

Everplate's three component organic additive systems consist of accelerators, suppressors and levelers for superior filling performance of high aspect ratio (AR) structures. The additive systems are designed to enhance the bottom-up fill and provide a uniform copper thickness distribution with minimal overburden for Chemical Mechanical Planarization (CMP).

Features and Benefits

Everplate chemistries and process solutions are designed to satisfy the stringent requirements for the Damascene plating process and the deposited copper. In order to maximize yield and throughput, a reliable and stable process with the following features is needed.

  • Reliable gap fill properties and void-free filling of high AR structures (< 5:1)
  • Uniform copper thickness distribution, 3% (3σ)
  • Low post CMP defect density
  • Low resistance and post anneal internal stress
  • Low resistivity and contact resistance
  • Superior electromigration (EM) and stress migration (SM) properties